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Ron collapse, breakdown and degradation of d-mode MIS-HEMTs based on GaN on Si technology

dc.contributor.authorMeneghini, Matteo
dc.contributor.authorBisi, Davide
dc.contributor.authorMarcon, Denis
dc.contributor.authorStoffels, Steve
dc.contributor.authorVan Hove, Marleen
dc.contributor.authorWu, Tian-Li
dc.contributor.authorDecoutere, Stefaan
dc.contributor.authorMeneghesso, Gaudenzio
dc.contributor.authorZanoni, Enrico
dc.date.accessioned2021-10-21T10:02:00Z
dc.date.available2021-10-21T10:02:00Z
dc.date.issued2013
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/22799
dc.sourceIIOimport
dc.titleRon collapse, breakdown and degradation of d-mode MIS-HEMTs based on GaN on Si technology
dc.typeOral presentation
dc.contributor.imecauthorMarcon, Denis
dc.contributor.imecauthorStoffels, Steve
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.source.peerreviewno
dc.source.conference10th International Conference on Nitride Semiconductors - ICNS
dc.source.conferencedate25/08/2013
dc.source.conferencelocationWashington, DC USA
imec.availabilityPublished - imec
imec.internalnotesICNS-10 proceedings will be published in a special volume of Physica Status Solidi


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