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Negative bias temperature instability in devices with millisecond annealed ultra-shallow junctions

dc.contributor.authorMoras, Miquel
dc.contributor.authorMartin-Martinez, Javier
dc.contributor.authorRodriguez, Rosanna
dc.contributor.authorNafria, Montse
dc.contributor.authorAymerich, Xavier
dc.contributor.authorSimoen, Eddy
dc.date.accessioned2021-10-21T10:10:12Z
dc.date.available2021-10-21T10:10:12Z
dc.date.issued2013
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/22820
dc.sourceIIOimport
dc.titleNegative bias temperature instability in devices with millisecond annealed ultra-shallow junctions
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.conferenceInternational Semiconductor Device Research Symposium - ISDRS
dc.source.conferencedate11/12/2013
dc.source.conferencelocationBethesda, MD USA
dc.identifier.urlhttp://www.isdrs2013.org/technical-program
imec.availabilityPublished - open access


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