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Comparative experimental study between tensile and compressive uniaxially stressed nMuGFETs under x-ray radiation focusing on analog behavior

dc.contributor.authorPeruzzi, V.
dc.contributor.authorGimenez, Salvador
dc.contributor.authorAgopian, Paula
dc.contributor.authorSilveira, M.
dc.contributor.authorMarino, Jaoa
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-21T10:51:12Z
dc.date.available2021-10-21T10:51:12Z
dc.date.issued2013
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/22921
dc.sourceIIOimport
dc.titleComparative experimental study between tensile and compressive uniaxially stressed nMuGFETs under x-ray radiation focusing on analog behavior
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage177
dc.source.endpage185
dc.source.conferenceAdvanced Semiconductor-on-Insulator Technology and Related Physics 16
dc.source.conferencedate12/05/2013
dc.source.conferencelocationToronto Canada
imec.availabilityPublished - open access
imec.internalnotesECS Proceedings; Vol. 53; Issue 3


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