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Bandgap measurement by spectroscopic ellipsometry for strained Ge 1-x Sn x

dc.contributor.authorShimura, Yosuke
dc.contributor.authorWang, Wei
dc.contributor.authorNieddu, Thomas
dc.contributor.authorGencarelli, Federica
dc.contributor.authorVincent, Benjamin
dc.contributor.authorLaha, Priya
dc.contributor.authorTerryn, Herman
dc.contributor.authorStefanov, Stefan
dc.contributor.authorChiussi, Stefano
dc.contributor.authorVan Campenhout, Joris
dc.contributor.authorNguyen, Ngoc Duy
dc.contributor.authorVantomme, Andre
dc.contributor.authorLoo, Roger
dc.date.accessioned2021-10-21T12:01:57Z
dc.date.available2021-10-21T12:01:57Z
dc.date.issued2013-06
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/23079
dc.sourceIIOimport
dc.titleBandgap measurement by spectroscopic ellipsometry for strained Ge 1-x Sn x
dc.typeProceedings paper
dc.contributor.imecauthorVincent, Benjamin
dc.contributor.imecauthorVan Campenhout, Joris
dc.contributor.imecauthorVantomme, Andre
dc.contributor.imecauthorLoo, Roger
dc.contributor.orcidimecVan Campenhout, Joris::0000-0003-0778-2669
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.source.peerreviewyes
dc.source.beginpage65
dc.source.endpage66
dc.source.conference8th International conference on Silicon Epitaxy and Heterostructures - ICSI-8
dc.source.conferencedate2/06/2013
dc.source.conferencelocationFukuoka Japan
imec.availabilityPublished - imec


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