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Low-frequency-noise-based oxide trap profiling in replacement high-k/metal-gate pMOSFETs

dc.contributor.authorSimoen, Eddy
dc.contributor.authorLee, Jae Woo
dc.contributor.authorVeloso, Anabela
dc.contributor.authorParaschiv, Vasile
dc.contributor.authorHoriguchi, Naoto
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-21T12:06:21Z
dc.date.available2021-10-21T12:06:21Z
dc.date.issued2013
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/23088
dc.sourceIIOimport
dc.titleLow-frequency-noise-based oxide trap profiling in replacement high-k/metal-gate pMOSFETs
dc.typeMeeting abstract
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorVeloso, Anabela
dc.contributor.imecauthorParaschiv, Vasile
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage2246
dc.source.conference224th ECS Fall Meeting: Symposium on ULSI Process Integration
dc.source.conferencedate27/10/2013
dc.source.conferencelocationSan Francisco, CA USA
imec.availabilityPublished - open access
imec.internalnotesECS Meeting Abstracts; Vol. 2013-02


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