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Impact of oxide trap passivation by fluorine on the low-frequency noise behavior of gate-last pMOSFETs

dc.contributor.authorSimoen, Eddy
dc.contributor.authorVeloso, Anabela
dc.contributor.authorHoriguchi, Naoto
dc.contributor.authorParaschiv, Vasile
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-21T12:08:12Z
dc.date.available2021-10-21T12:08:12Z
dc.date.issued2013
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/23092
dc.sourceIIOimport
dc.titleImpact of oxide trap passivation by fluorine on the low-frequency noise behavior of gate-last pMOSFETs
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorVeloso, Anabela
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.imecauthorParaschiv, Vasile
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.source.peerreviewyes
dc.source.beginpage1
dc.source.endpage4
dc.source.conferenceInternational Conference on 1/f Noise and Fluctuations - ICNF
dc.source.conferencedate24/06/2013
dc.source.conferencelocationMontpellier France
imec.availabilityPublished - imec


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