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Scalability of RuTiN barriers deposited by plasma-enhanced atomic layer deposition for advanced interconnects

dc.contributor.authorSwerts, Johan
dc.contributor.authorSiew, Yong Kong
dc.contributor.authorVan Besien, Els
dc.contributor.authorBarbarin, Yohan
dc.contributor.authorBoemmels, Juergen
dc.contributor.authorTokei, Zsolt
dc.contributor.authorVan Elshocht, Sven
dc.date.accessioned2021-10-21T12:30:21Z
dc.date.available2021-10-21T12:30:21Z
dc.date.issued2013
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/23140
dc.sourceIIOimport
dc.titleScalability of RuTiN barriers deposited by plasma-enhanced atomic layer deposition for advanced interconnects
dc.typeMeeting abstract
dc.contributor.imecauthorSwerts, Johan
dc.contributor.imecauthorSiew, Yong Kong
dc.contributor.imecauthorVan Besien, Els
dc.contributor.imecauthorBoemmels, Juergen
dc.contributor.imecauthorTokei, Zsolt
dc.contributor.imecauthorVan Elshocht, Sven
dc.contributor.orcidimecVan Besien, Els::0000-0002-5174-2229
dc.contributor.orcidimecVan Elshocht, Sven::0000-0002-6512-1909
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage255
dc.source.endpage256
dc.source.conferenceMaterials for Advanced Metallization - MAM
dc.source.conferencedate10/03/2013
dc.source.conferencelocationLeuven Belgium
imec.availabilityPublished - open access
imec.internalnotesMD4


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