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Analytical model for anomalous positive bias temperature instability in La-based HfO2 nFETs based on independent characterization of charging components
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Analytical model for anomalous positive bias temperature instability in La-based HfO2 nFETs based on independent characterization of charging components
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Date
2013
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Toledano Luque, Maria
;
Kaczer, Ben
;
Aoulaiche, Marc
;
Spessot, Alessio
;
Roussel, Philippe
;
Ritzenthaler, Romain
;
Schram, Tom
;
Thean, Aaron
;
Groeseneken, Guido
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1984
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Views
1984
since deposited on 2021-10-21
2
last month
2
last week
Acq. date: 2026-02-25
Citations