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Analytical model for anomalous positive bias temperature instability in La-based HfO2 nFETs based on independent characterization of charging components

dc.contributor.authorToledano Luque, Maria
dc.contributor.authorKaczer, Ben
dc.contributor.authorAoulaiche, Marc
dc.contributor.authorSpessot, Alessio
dc.contributor.authorRoussel, Philippe
dc.contributor.authorRitzenthaler, Romain
dc.contributor.authorSchram, Tom
dc.contributor.authorThean, Aaron
dc.contributor.authorGroeseneken, Guido
dc.date.accessioned2021-10-21T12:47:03Z
dc.date.available2021-10-21T12:47:03Z
dc.date.issued2013
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/23174
dc.sourceIIOimport
dc.titleAnalytical model for anomalous positive bias temperature instability in La-based HfO2 nFETs based on independent characterization of charging components
dc.typeMeeting abstract
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorSpessot, Alessio
dc.contributor.imecauthorRoussel, Philippe
dc.contributor.imecauthorRitzenthaler, Romain
dc.contributor.imecauthorSchram, Tom
dc.contributor.imecauthorThean, Aaron
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecRoussel, Philippe::0000-0002-0402-8225
dc.contributor.orcidimecRitzenthaler, Romain::0000-0002-8615-3272
dc.contributor.orcidimecSchram, Tom::0000-0003-1533-7055
dc.source.peerreviewyes
dc.source.beginpage164
dc.source.endpage165
dc.source.conference18th Conference of Insulting Films on Semiconductors - INFOS: Book of Abstracts
dc.source.conferencedate25/06/2013
dc.source.conferencelocationCracow Poland
imec.availabilityPublished - imec


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