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The influence of post-etch InGaAs Fin profile on electrical performance

dc.contributor.authorIvanov, Tsvetan
dc.contributor.authorPourghaderi, Mohammad Ali
dc.contributor.authorLin, Dennis
dc.contributor.authorYu, Jen-Kan
dc.contributor.authorTan, S.
dc.contributor.authorMikhaylich, K.
dc.contributor.authorKimura, Y.
dc.contributor.authorHellin, David
dc.contributor.authorGeypen, Jef
dc.contributor.authorBender, Hugo
dc.contributor.authorVertommen, Johan
dc.contributor.authorKamarthy, G.
dc.contributor.authorCollaert, Nadine
dc.contributor.authorMarks, J.
dc.contributor.authorVahedi, V
dc.contributor.authorArghavani, R.
dc.contributor.authorThean, Aaron
dc.date.accessioned2021-10-21T12:57:58Z
dc.date.available2021-10-21T12:57:58Z
dc.date.issued2013
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/23196
dc.sourceIIOimport
dc.titleThe influence of post-etch InGaAs Fin profile on electrical performance
dc.typeProceedings paper
dc.contributor.imecauthorIvanov, Tsvetan
dc.contributor.imecauthorLin, Dennis
dc.contributor.imecauthorHellin, David
dc.contributor.imecauthorGeypen, Jef
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorThean, Aaron
dc.contributor.orcidimecIvanov, Tsvetan::0000-0003-3407-2742
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.source.peerreviewyes
dc.source.beginpage700
dc.source.endpage701
dc.source.conferenceExtended Abstracts of the International Conference on Solid State Devices and Materials - SSDM
dc.source.conferencedate24/09/2013
dc.source.conferencelocationFukuoka Japan
imec.availabilityPublished - imec


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