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Spectroellipsometric Characterization of Thin Epitaxial Si1-xGex Layers

dc.contributor.authorLibezny, Milan
dc.contributor.authorCaymax, Matty
dc.contributor.authorBrablec, A.
dc.contributor.authorKubena, J.
dc.contributor.authorHoly, V.
dc.contributor.authorPoortmans, Jef
dc.contributor.authorNijs, Johan
dc.contributor.authorVanhellemont, Jan
dc.date.accessioned2021-09-29T12:43:08Z
dc.date.available2021-09-29T12:43:08Z
dc.date.issued1994
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/231
dc.sourceIIOimport
dc.titleSpectroellipsometric Characterization of Thin Epitaxial Si1-xGex Layers
dc.typeOral presentation
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorPoortmans, Jef
dc.contributor.orcidimecPoortmans, Jef::0000-0003-2077-2545
dc.source.peerreviewno
dc.source.conference1st International Conference on Materials for Microelectronics; October 17-19, 1994; Barcelona, Spain.
imec.availabilityPublished - imec


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