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Strained germanium quantum well pMOS FinFETs fabricated on in situ phosphorus-doped SiGe strain relaxed buffer layers using a replacement fin process

dc.contributor.authorWitters, Liesbeth
dc.contributor.authorMitard, Jerome
dc.contributor.authorLoo, Roger
dc.contributor.authorEneman, Geert
dc.contributor.authorMertens, Hans
dc.contributor.authorBrunco, David
dc.contributor.authorLee, Seung Hun
dc.contributor.authorWaldron, Niamh
dc.contributor.authorHikavyy, Andriy
dc.contributor.authorFavia, Paola
dc.contributor.authorMilenin, Alexey
dc.contributor.authorShimura, Yosuke
dc.contributor.authorVrancken, Christa
dc.contributor.authorBender, Hugo
dc.contributor.authorHoriguchi, Naoto
dc.contributor.authorBarla, Kathy
dc.contributor.authorThean, Aaron
dc.contributor.authorCollaert, Nadine
dc.date.accessioned2021-10-21T14:39:46Z
dc.date.available2021-10-21T14:39:46Z
dc.date.issued2013-12
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/23399
dc.sourceIIOimport
dc.titleStrained germanium quantum well pMOS FinFETs fabricated on in situ phosphorus-doped SiGe strain relaxed buffer layers using a replacement fin process
dc.typeProceedings paper
dc.contributor.imecauthorWitters, Liesbeth
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorMertens, Hans
dc.contributor.imecauthorWaldron, Niamh
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorFavia, Paola
dc.contributor.imecauthorMilenin, Alexey
dc.contributor.imecauthorVrancken, Christa
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.imecauthorBarla, Kathy
dc.contributor.imecauthorThean, Aaron
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimecFavia, Paola::0000-0002-1019-3497
dc.contributor.orcidimecMilenin, Alexey::0000-0003-0747-0462
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.source.peerreviewyes
dc.source.beginpage534
dc.source.endpage537
dc.source.conferenceInternational Electron Devices Meeting - IEDM
dc.source.conferencedate9/12/2013
dc.source.conferencelocationWashington, DC USA
imec.availabilityPublished - imec


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