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Guidelines for reducing NBTI based on its correlation with effective work function studied by CV-BTI on high-k first MOS capacitors with slant etched SiO2

dc.contributor.authorArimura, Hiroaki
dc.contributor.authorRagnarsson, Lars-Ake
dc.contributor.authorSchram, Tom
dc.contributor.authorAlbert, Johan
dc.contributor.authorKaczer, Ben
dc.contributor.authorDegraeve, Robin
dc.contributor.authorBury, Erik
dc.contributor.authorAoulaiche, Marc
dc.contributor.authorKauerauf, Thomas
dc.contributor.authorThean, Aaron
dc.contributor.authorHoriguchi, Naoto
dc.contributor.authorGroeseneken, Guido
dc.date.accessioned2021-10-22T00:43:52Z
dc.date.available2021-10-22T00:43:52Z
dc.date.issued2014
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/23498
dc.sourceIIOimport
dc.titleGuidelines for reducing NBTI based on its correlation with effective work function studied by CV-BTI on high-k first MOS capacitors with slant etched SiO2
dc.typeProceedings paper
dc.contributor.imecauthorArimura, Hiroaki
dc.contributor.imecauthorRagnarsson, Lars-Ake
dc.contributor.imecauthorSchram, Tom
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorBury, Erik
dc.contributor.imecauthorThean, Aaron
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecRagnarsson, Lars-Ake::0000-0003-1057-8140
dc.contributor.orcidimecSchram, Tom::0000-0003-1533-7055
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecBury, Erik::0000-0002-5847-3949
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage3C.4.1
dc.source.endpage3C.4.6
dc.source.conferenceInternational Reliability Physics Symposium - IRPS
dc.source.conferencedate1/06/2014
dc.source.conferencelocationWaikoloa, HI USA
dc.identifier.urlhttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?tp=&arnumber=6860624&contentType=Conference+Publications
imec.availabilityPublished - open access


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