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Investigation of correlated trap sites in SILC, BTI and RTN in SiON and HKMG devices

dc.contributor.authorBury, Erik
dc.contributor.authorDegraeve, Robin
dc.contributor.authorCho, Moon Ju
dc.contributor.authorKaczer, Ben
dc.contributor.authorGoes, Wolfang
dc.contributor.authorGrasser, Tibor
dc.contributor.authorGroeseneken, Guido
dc.date.accessioned2021-10-22T00:50:47Z
dc.date.available2021-10-22T00:50:47Z
dc.date.issued2014
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/23594
dc.sourceIIOimport
dc.titleInvestigation of correlated trap sites in SILC, BTI and RTN in SiON and HKMG devices
dc.typeMeeting abstract
dc.contributor.imecauthorBury, Erik
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecBury, Erik::0000-0002-5847-3949
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.source.peerreviewno
dc.source.conference21st International Symposium on the Physical and Failure Analysis of Integrated Circuits - IPFA
dc.source.conferencedate30/05/2014
dc.source.conferencelocationSingapore Singapore
imec.availabilityPublished - imec


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