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Study of (correlated) trap sites in SILC, BTI and RTN in SiON and HKMG devices

dc.contributor.authorBury, Erik
dc.contributor.authorDegraeve, Robin
dc.contributor.authorCho, Moon Ju
dc.contributor.authorKaczer, Ben
dc.contributor.authorGoes, Wolfgang
dc.contributor.authorGrasser, Tibor
dc.contributor.authorHoriguchi, Naoto
dc.contributor.authorGroeseneken, Guido
dc.date.accessioned2021-10-22T00:50:54Z
dc.date.available2021-10-22T00:50:54Z
dc.date.issued2014
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/23595
dc.sourceIIOimport
dc.titleStudy of (correlated) trap sites in SILC, BTI and RTN in SiON and HKMG devices
dc.typeProceedings paper
dc.contributor.imecauthorBury, Erik
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecBury, Erik::0000-0002-5847-3949
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.source.peerreviewyes
dc.source.beginpagena
dc.source.conferenceInternational Symposium on the Physical and Failure Analysis of Integrated Circuits - IPFA
dc.source.conferencedate30/06/2014
dc.source.conferencelocationSingapore Singapore
imec.availabilityPublished - imec


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