dc.contributor.author | Chen, Shih-Hung | |
dc.contributor.author | Lee, Jam-Wem | |
dc.contributor.author | Linten, Dimitri | |
dc.contributor.author | Scholz, Mirko | |
dc.contributor.author | Song, Ming-Hsiang | |
dc.contributor.author | Hellings, Geert | |
dc.contributor.author | Boschke, Roman | |
dc.contributor.author | Sibaja-Hernandez, Arturo | |
dc.contributor.author | Groeseneken, Guido | |
dc.date.accessioned | 2021-10-22T00:55:18Z | |
dc.date.available | 2021-10-22T00:55:18Z | |
dc.date.issued | 2014-12 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/23631 | |
dc.source | IIOimport | |
dc.title | Impacts of process options on ESD device characteristics in sub-20nm bulk FinFET technology nodes | |
dc.type | Meeting abstract | |
dc.contributor.imecauthor | Chen, Shih-Hung | |
dc.contributor.imecauthor | Linten, Dimitri | |
dc.contributor.imecauthor | Hellings, Geert | |
dc.contributor.imecauthor | Sibaja-Hernandez, Arturo | |
dc.contributor.imecauthor | Groeseneken, Guido | |
dc.contributor.orcidimec | Linten, Dimitri::0000-0001-8434-1838 | |
dc.contributor.orcidimec | Hellings, Geert::0000-0002-5376-2119 | |
dc.source.peerreview | yes | |
dc.source.beginpage | 514 | |
dc.source.endpage | 517 | |
dc.source.conference | IEEE International Electron Devices Meeting - IEDM | |
dc.source.conferencedate | 15/12/2014 | |
dc.source.conferencelocation | San Francisco, CA USA | |
imec.availability | Published - imec | |