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Improvement on CDM ESD robustness of high-voltage tolerant nLDMOS SCR devices by using differential doped gate

dc.contributor.authorChen, Shih-Hung
dc.contributor.authorLinten, Dimitri
dc.contributor.authorScholz, Mirko
dc.contributor.authorHellings, Geert
dc.contributor.authorBoschke, Roman
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorHuang, S.-H.
dc.contributor.authorKer, M.-D.
dc.date.accessioned2021-10-22T00:55:35Z
dc.date.available2021-10-22T00:55:35Z
dc.date.issued2014
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/23633
dc.sourceIIOimport
dc.titleImprovement on CDM ESD robustness of high-voltage tolerant nLDMOS SCR devices by using differential doped gate
dc.typeProceedings paper
dc.contributor.imecauthorChen, Shih-Hung
dc.contributor.imecauthorLinten, Dimitri
dc.contributor.imecauthorHellings, Geert
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecLinten, Dimitri::0000-0001-8434-1838
dc.contributor.orcidimecHellings, Geert::0000-0002-5376-2119
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage4C.2
dc.source.conferenceIEEE International Reliability Physics Symposium - IRPS
dc.source.conferencedate1/06/2014
dc.source.conferencelocationWaikoloa, HI USA
dc.identifier.urlhttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?tp=&arnumber=6860651&contentType=Conference+Publications
imec.availabilityPublished - open access


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