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dc.contributor.authorChen, Yangyin
dc.contributor.authorRoelofs, Robin
dc.contributor.authorRedolfi, Augusto
dc.contributor.authorDegraeve, Robin
dc.contributor.authorCrotti, Davide
dc.contributor.authorFantini, Andrea
dc.contributor.authorClima, Sergiu
dc.contributor.authorGovoreanu, Bogdan
dc.contributor.authorKomura, Masanori
dc.contributor.authorGoux, Ludovic
dc.contributor.authorZhang, Leqi
dc.contributor.authorBelmonte, Attilio
dc.contributor.authorXie, Qi
dc.contributor.authorMaes, Jan
dc.contributor.authorPourtois, Geoffrey
dc.contributor.authorJurczak, Gosia
dc.date.accessioned2021-10-22T00:55:53Z
dc.date.available2021-10-22T00:55:53Z
dc.date.issued2014
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/23635
dc.sourceIIOimport
dc.titleTailoring switching and endurance / retention reliability characteristics of HfO2 / Hf RRAM with Ti, Al, Si dopants
dc.typeProceedings paper
dc.contributor.imecauthorChen, Yangyin
dc.contributor.imecauthorRedolfi, Augusto
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorCrotti, Davide
dc.contributor.imecauthorFantini, Andrea
dc.contributor.imecauthorClima, Sergiu
dc.contributor.imecauthorGovoreanu, Bogdan
dc.contributor.imecauthorGoux, Ludovic
dc.contributor.imecauthorBelmonte, Attilio
dc.contributor.imecauthorXie, Qi
dc.contributor.imecauthorMaes, Jan
dc.contributor.imecauthorPourtois, Geoffrey
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.orcidimecClima, Sergiu::0000-0002-4044-9975
dc.contributor.orcidimecGoux, Ludovic::0000-0002-1276-2278
dc.contributor.orcidimecPourtois, Geoffrey::0000-0003-2597-8534
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage166
dc.source.endpage167
dc.source.conferenceIEEE Symposium on VLSI Technology
dc.source.conferencedate9/06/2014
dc.source.conferencelocationHonolulu, HI USA
dc.identifier.urlhttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?tp=&arnumber=6894403&contentType=Conference+Publications
imec.availabilityPublished - open access


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