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Ultra-low damage integration of k= 2.3 periodic mesoporous oxide dielectric material using cryogenic etching

dc.contributor.authorde Marneffe, Jean-Francois
dc.contributor.authorZhang, Liping
dc.contributor.authorKrishtab, Mikhail
dc.contributor.authorGoodyear, Andy
dc.contributor.authorCooke, Mike
dc.contributor.authorHeylen, Nancy
dc.contributor.authorCiofi, Ivan
dc.contributor.authorWen, Liang Gong
dc.contributor.authorWilson, Chris
dc.contributor.authorSavage, Travis
dc.contributor.authorMatsunaga, Koichi
dc.contributor.authorNafus, Kathleen
dc.contributor.authorBoemmels, Juergen
dc.contributor.authorTokei, Zsolt
dc.contributor.authorBaklanov, Mikhaïl
dc.date.accessioned2021-10-22T01:06:56Z
dc.date.available2021-10-22T01:06:56Z
dc.date.issued2014
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/23709
dc.sourceIIOimport
dc.titleUltra-low damage integration of k= 2.3 periodic mesoporous oxide dielectric material using cryogenic etching
dc.typeMeeting abstract
dc.contributor.imecauthorde Marneffe, Jean-Francois
dc.contributor.imecauthorZhang, Liping
dc.contributor.imecauthorKrishtab, Mikhail
dc.contributor.imecauthorHeylen, Nancy
dc.contributor.imecauthorCiofi, Ivan
dc.contributor.imecauthorWilson, Chris
dc.contributor.imecauthorNafus, Kathleen
dc.contributor.imecauthorBoemmels, Juergen
dc.contributor.imecauthorTokei, Zsolt
dc.contributor.orcidimecCiofi, Ivan::0000-0003-1374-4116
dc.source.peerreviewno
dc.source.beginpageCC1.04
dc.source.conferenceMRS Spring Meeting Symposium CC: New Materials and Processes for Interconnects, Novel Memory and Advanced Display Technologies
dc.source.conferencedate21/04/2014
dc.source.conferencelocationSan Francisco, CA USA
imec.availabilityPublished - imec


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