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Active area oxidation during the densification of shallow trench isolation for sub-0.25 micron CMOS

dc.contributor.authorBazley, D. J.
dc.contributor.authorJones, S. K.
dc.contributor.authorBadenes, Gonçal
dc.date.accessioned2021-09-30T11:26:29Z
dc.date.available2021-09-30T11:26:29Z
dc.date.issued1998
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/2374
dc.sourceIIOimport
dc.titleActive area oxidation during the densification of shallow trench isolation for sub-0.25 micron CMOS
dc.typeProceedings paper
dc.source.peerreviewno
dc.source.beginpage124
dc.source.endpage127
dc.source.conferenceProceedings of the 28th European Solid-State Device Research Conference - ESSDERC
dc.source.conferencedate8/09/1998
dc.source.conferencelocationBordeaux France
imec.availabilityPublished - imec


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