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Material studies on Si:C and Si:CP epitaxial films grown using disilane, monomethylsilane and phosphine

dc.contributor.authorDhayalan, Sathish Kumar
dc.contributor.authorLoo, Roger
dc.contributor.authorRosseel, Erik
dc.contributor.authorHikavyy, Andriy
dc.contributor.authorShimura, Yosuke
dc.contributor.authorNuytten, Thomas
dc.contributor.authorRichard, Olivier
dc.contributor.authorBender, Hugo
dc.contributor.authorDouhard, Bastien
dc.contributor.authorVandervorst, Wilfried
dc.date.accessioned2021-10-22T01:17:16Z
dc.date.available2021-10-22T01:17:16Z
dc.date.issued2014
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/23765
dc.sourceIIOimport
dc.titleMaterial studies on Si:C and Si:CP epitaxial films grown using disilane, monomethylsilane and phosphine
dc.typeMeeting abstract
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorRosseel, Erik
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorNuytten, Thomas
dc.contributor.imecauthorRichard, Olivier
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorDouhard, Bastien
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimecNuytten, Thomas::0000-0002-5921-6928
dc.contributor.orcidimecRichard, Olivier::0000-0002-3994-8021
dc.source.peerreviewyes
dc.source.beginpage1858
dc.source.conference226th Fall Meeting of the Electrochemical Society
dc.source.conferencedate5/10/2014
dc.source.conferencelocationCancun Mexico
dc.identifier.urlhttps://ecs.confex.com/ecs/226/webprogram/Paper40652.html
imec.availabilityPublished - imec


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