dc.contributor.author | Dhayalan, Sathish Kumar | |
dc.contributor.author | Loo, Roger | |
dc.contributor.author | Rosseel, Erik | |
dc.contributor.author | Hikavyy, Andriy | |
dc.contributor.author | Shimura, Yosuke | |
dc.contributor.author | Nuytten, Thomas | |
dc.contributor.author | Richard, Olivier | |
dc.contributor.author | Bender, Hugo | |
dc.contributor.author | Douhard, Bastien | |
dc.contributor.author | Vandervorst, Wilfried | |
dc.date.accessioned | 2021-10-22T01:17:29Z | |
dc.date.available | 2021-10-22T01:17:29Z | |
dc.date.issued | 2014-10 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/23766 | |
dc.source | IIOimport | |
dc.title | Material studies on Si:C epitaxial films grown by CVD | |
dc.type | Proceedings paper | |
dc.contributor.imecauthor | Loo, Roger | |
dc.contributor.imecauthor | Rosseel, Erik | |
dc.contributor.imecauthor | Hikavyy, Andriy | |
dc.contributor.imecauthor | Nuytten, Thomas | |
dc.contributor.imecauthor | Richard, Olivier | |
dc.contributor.imecauthor | Bender, Hugo | |
dc.contributor.imecauthor | Douhard, Bastien | |
dc.contributor.imecauthor | Vandervorst, Wilfried | |
dc.contributor.orcidimec | Loo, Roger::0000-0003-3513-6058 | |
dc.contributor.orcidimec | Hikavyy, Andriy::0000-0002-8201-075X | |
dc.contributor.orcidimec | Nuytten, Thomas::0000-0002-5921-6928 | |
dc.contributor.orcidimec | Richard, Olivier::0000-0002-3994-8021 | |
dc.date.embargo | 9999-12-31 | |
dc.source.peerreview | yes | |
dc.source.beginpage | 997 | |
dc.source.endpage | 1005 | |
dc.source.conference | SiGe, Ge, and Related Compounds 6: Materials, Processing, and Devices | |
dc.source.conferencedate | 5/10/2014 | |
dc.source.conferencelocation | Cancun Mexico | |
dc.identifier.url | http://ecst.ecsdl.org/content/64/6/997.abstract | |
imec.availability | Published - open access | |
imec.internalnotes | ECS Transactions; Vol.64, Issue 6 | |