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Effect of substrate defects on GOI of ultra-thin gate oxides

dc.contributor.authorBearda, Twan
dc.contributor.authorVanhellemont, Jan
dc.contributor.authorMertens, Paul
dc.contributor.authorHeyns, Marc
dc.date.accessioned2021-09-30T11:26:38Z
dc.date.available2021-09-30T11:26:38Z
dc.date.issued1998
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/2376
dc.sourceIIOimport
dc.titleEffect of substrate defects on GOI of ultra-thin gate oxides
dc.typeProceedings paper
dc.contributor.imecauthorMertens, Paul
dc.contributor.imecauthorHeyns, Marc
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage258
dc.source.endpage263
dc.source.conferenceProceedings of the 5th International Symposium on High Purity Silicon V
dc.source.conferencedate2/11/1998
dc.source.conferencelocationBoston, MA USA
imec.availabilityPublished - open access
imec.internalnotesElectrochemical Society Proceedings; Vol. 98-13


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