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dc.contributor.authorDussart, R.
dc.contributor.authorTillocher, T.
dc.contributor.authorGosset, N.
dc.contributor.authorVital, A
dc.contributor.authorLefaucheux, P.
dc.contributor.authorL'jazouli, R
dc.contributor.authorBoufnichel, M.
dc.contributor.authorVayer, M.
dc.contributor.authorSinturel, C.
dc.contributor.authorZhang, Liping
dc.contributor.authorde Marneffe, Jean-Francois
dc.contributor.authorBaklanov, Mikhaïl
dc.contributor.authorNishimura, E.
dc.contributor.authorYatsuda, K.
dc.contributor.authorMaekawa, K.
dc.date.accessioned2021-10-22T01:21:10Z
dc.date.available2021-10-22T01:21:10Z
dc.date.issued2014
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/23783
dc.sourceIIOimport
dc.titlePlasma cryoetching processes for silicon and advanced materials
dc.typeMeeting abstract
dc.contributor.imecauthorZhang, Liping
dc.contributor.imecauthorde Marneffe, Jean-Francois
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.conferenceInternational Conference on Microelectronics and Plasma Technology - ICMAP
dc.source.conferencedate8/07/2014
dc.source.conferencelocationGunsan Korea
imec.availabilityPublished - open access


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