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Cryoetching of silicon and advanced materials for 3D interconnects

dc.contributor.authorDussart, R.
dc.contributor.authorTillocher, T.
dc.contributor.authorGosset, N
dc.contributor.authorLefaucheux, P.
dc.contributor.authorL'jazouli, R
dc.contributor.authorBoufnichel, M.
dc.contributor.authorZhang, Liping
dc.contributor.authorde Marneffe, Jean-Francois
dc.contributor.authorBaklanov, Mikhaïl
dc.contributor.authorNishimura, E
dc.contributor.authorYatsuda, K
dc.contributor.authorMaekawa, K
dc.date.accessioned2021-10-22T01:21:24Z
dc.date.available2021-10-22T01:21:24Z
dc.date.issued2014
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/23784
dc.sourceIIOimport
dc.titleCryoetching of silicon and advanced materials for 3D interconnects
dc.typeMeeting abstract
dc.contributor.imecauthorZhang, Liping
dc.contributor.imecauthorde Marneffe, Jean-Francois
dc.source.peerreviewyes
dc.source.beginpage1689
dc.source.conferenceECS Fall Meeting Symposium P5: Processing Materials of 3D Interconnects, Damascene, and Electronics Packaging 6
dc.source.conferencedate5/10/2014
dc.source.conferencelocationCancun Mexico
dc.identifier.urlhttp://ma.ecsdl.org/content/MA2014-02/33/1689.abstract
imec.availabilityPublished - imec
imec.internalnotesECS Meeting Abstracts; Vol. MA2014-02


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