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Ti as a reactive gate electrode on high-k/p-Ge MOS capacitors

dc.contributor.authorFadida, Sivan
dc.contributor.authorNyns, Laura
dc.contributor.authorLin, Dennis
dc.contributor.authorVan Elshocht, Sven
dc.contributor.authorCaymax, Matty
dc.contributor.authorEizenberg, Moshe
dc.date.accessioned2021-10-22T01:24:28Z
dc.date.available2021-10-22T01:24:28Z
dc.date.issued2014
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/23799
dc.sourceIIOimport
dc.titleTi as a reactive gate electrode on high-k/p-Ge MOS capacitors
dc.typeMeeting abstract
dc.contributor.imecauthorNyns, Laura
dc.contributor.imecauthorLin, Dennis
dc.contributor.imecauthorVan Elshocht, Sven
dc.contributor.imecauthorCaymax, Matty
dc.contributor.orcidimecNyns, Laura::0000-0001-8220-870X
dc.contributor.orcidimecVan Elshocht, Sven::0000-0002-6512-1909
dc.source.peerreviewno
dc.source.conference18th Workshop on Dielectrics in Microelectronics - WODIM
dc.source.conferencedate9/06/2014
dc.source.conferencelocationKinsale Ireland
imec.availabilityPublished - imec


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