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Study of DID/ID of a single charge trap in UTBOX silicon films

dc.contributor.authorFang, Wen
dc.contributor.authorSimoen, Eddy
dc.contributor.authorAoulaiche, Marc
dc.contributor.authorLuo, Jun
dc.contributor.authorZhao, Chao
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-22T01:25:46Z
dc.date.available2021-10-22T01:25:46Z
dc.date.issued2014
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/23805
dc.sourceIIOimport
dc.titleStudy of DID/ID of a single charge trap in UTBOX silicon films
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewyes
dc.source.beginpage1643
dc.source.endpage1645
dc.source.conferenceIEEE 12th International Conference on Solid-State and Integrated Circuit Technology - ICSICT
dc.source.conferencedate28/10/2014
dc.source.conferencelocationGuilin China
imec.availabilityPublished - imec


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