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Lateral and vertical scaling impact on statistical performances and reliability of 10nm TiN/Hf(Al)O/Hf/TiN RRAM devices

dc.contributor.authorFantini, Andrea
dc.contributor.authorGoux, Ludovic
dc.contributor.authorRedolfi, Augusto
dc.contributor.authorDegraeve, Robin
dc.contributor.authorKar, Gouri Sankar
dc.contributor.authorChen, Yangyin
dc.contributor.authorJurczak, Gosia
dc.date.accessioned2021-10-22T01:26:15Z
dc.date.available2021-10-22T01:26:15Z
dc.date.issued2014
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/23807
dc.sourceIIOimport
dc.titleLateral and vertical scaling impact on statistical performances and reliability of 10nm TiN/Hf(Al)O/Hf/TiN RRAM devices
dc.typeProceedings paper
dc.contributor.imecauthorFantini, Andrea
dc.contributor.imecauthorGoux, Ludovic
dc.contributor.imecauthorRedolfi, Augusto
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorKar, Gouri Sankar
dc.contributor.imecauthorChen, Yangyin
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.orcidimecGoux, Ludovic::0000-0002-1276-2278
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage242
dc.source.endpage243
dc.source.conferenceSymposium on VLSI Technology
dc.source.conferencedate9/06/2014
dc.source.conferencelocationHonolulu, HI USA
dc.identifier.urlhttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?tp=&arnumber=6894433&contentType=Conference+Publications
imec.availabilityPublished - open access


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