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dc.contributor.authorGoux, Ludovic
dc.contributor.authorFantini, Andrea
dc.contributor.authorRedolfi, Augusto
dc.contributor.authorChen, Michael
dc.contributor.authorShi, FangFang
dc.contributor.authorDegraeve, Robin
dc.contributor.authorChen, Yangyin
dc.contributor.authorWitters, Thomas
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorJurczak, Gosia
dc.date.accessioned2021-10-22T01:41:48Z
dc.date.available2021-10-22T01:41:48Z
dc.date.issued2014
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/23871
dc.sourceIIOimport
dc.titleRole of the Ta scavenger electrode in the excellent switching control and reliability of a scalable low-current operated TiN\Ta2O5\Ta RRAM device
dc.typeProceedings paper
dc.contributor.imecauthorGoux, Ludovic
dc.contributor.imecauthorFantini, Andrea
dc.contributor.imecauthorRedolfi, Augusto
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorChen, Yangyin
dc.contributor.imecauthorWitters, Thomas
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.orcidimecGoux, Ludovic::0000-0002-1276-2278
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage162
dc.source.endpage163
dc.source.conferenceSymposium on VLSI technology
dc.source.conferencedate9/06/2014
dc.source.conferencelocationHonolulu, HI USA
imec.availabilityPublished - open access


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