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dc.contributor.authorGupta, Somya
dc.contributor.authorSimoen, Eddy
dc.contributor.authorDobri, Adam
dc.contributor.authorVrielinck, Henk
dc.contributor.authorLauwaert, Johan
dc.contributor.authorMerckling, Clement
dc.contributor.authorGencarelli, Federica
dc.contributor.authorShimura, Yosuke
dc.contributor.authorLoo, Roger
dc.contributor.authorHeyns, Marc
dc.date.accessioned2021-10-22T01:47:22Z
dc.date.available2021-10-22T01:47:22Z
dc.date.issued2014
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/23891
dc.sourceIIOimport
dc.titleProfiling of border traps at GeSn and high-K oxide interface
dc.typeMeeting abstract
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorMerckling, Clement
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecMerckling, Clement::0000-0003-3084-2543
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.source.peerreviewyes
dc.source.beginpage1647
dc.source.conferenceECS 2014 Fall Meeting, Symposium P3: High Purity and High Mobility Semiconductors 13
dc.source.conferencedate5/10/2014
dc.source.conferencelocationCancun Mexico
dc.identifier.urlhttps://ecs.confex.com/ecs/226/webprogram/Paper39917.html
imec.availabilityPublished - imec


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