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High Ge content SiGe thin films: growth, properties and integration

dc.contributor.authorHikavyy, Andriy
dc.contributor.authorRosseel, Erik
dc.contributor.authorDhayalan, Sathish Kumar
dc.contributor.authorWitters, Liesbeth
dc.contributor.authorMertens, Hans
dc.contributor.authorBender, Hugo
dc.contributor.authorFavia, Paola
dc.contributor.authorLoo, Roger
dc.date.accessioned2021-10-22T01:58:26Z
dc.date.available2021-10-22T01:58:26Z
dc.date.issued2014
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/23936
dc.sourceIIOimport
dc.titleHigh Ge content SiGe thin films: growth, properties and integration
dc.typeProceedings paper
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorRosseel, Erik
dc.contributor.imecauthorWitters, Liesbeth
dc.contributor.imecauthorMertens, Hans
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorFavia, Paola
dc.contributor.imecauthorLoo, Roger
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimecFavia, Paola::0000-0002-1019-3497
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.source.peerreviewyes
dc.source.beginpage831
dc.source.endpage839
dc.source.conferenceSiGe, Ge, and Related Copounds 6: Materials, Processing, and Devices
dc.source.conferencedate5/10/2014
dc.source.conferencelocationCancun Mexico
dc.identifier.urlhttp://ecst.ecsdl.org/content/64/6/831.abstract
imec.availabilityPublished - imec
imec.internalnotesECS Transactions; Vol. 64, Issue 6


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