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A reliable method for the extraction of the lateral position of defects in ultra-scaled MOSFETs

dc.contributor.authorIllarionov, Yu. Yu.
dc.contributor.authorBina, M.
dc.contributor.authorTyaginov, S. E.
dc.contributor.authorRott, K.
dc.contributor.authorReisinger, H.
dc.contributor.authorKaczer, Ben
dc.contributor.authorGrasser, T.
dc.date.accessioned2021-10-22T02:11:57Z
dc.date.available2021-10-22T02:11:57Z
dc.date.issued2014
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/23979
dc.sourceIIOimport
dc.titleA reliable method for the extraction of the lateral position of defects in ultra-scaled MOSFETs
dc.typeProceedings paper
dc.contributor.imecauthorKaczer, Ben
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.source.peerreviewyes
dc.source.beginpageXT.13
dc.source.conferenceInternational Reliability Physics Symposium - IRPS
dc.source.conferencedate1/06/2014
dc.source.conferencelocationWaikoloa, HI USA
dc.identifier.urlhttp://dx.doi.org/10.1109/IRPS.2014.6861190
imec.availabilityPublished - imec


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