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dc.contributor.authorLauwaert, Johan
dc.contributor.authorMoens, Filip
dc.contributor.authorSegers, Siegfried
dc.contributor.authorOpsomer, Karl
dc.contributor.authorSimoen, Eddy
dc.contributor.authorVanhellemont, Jan
dc.contributor.authorClauws, Paul
dc.contributor.authorCallens, Freddy
dc.contributor.authorVrielinck, Henk
dc.date.accessioned2021-10-22T02:51:53Z
dc.date.available2021-10-22T02:51:53Z
dc.date.issued2014
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/24103
dc.sourceIIOimport
dc.titleMn related defect levels in germanium
dc.typeProceedings paper
dc.contributor.imecauthorOpsomer, Karl
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewyes
dc.source.beginpage1658
dc.source.conference226th ECS Fall Meeting - High Purity and High Mobility Semiconductors Symposium
dc.source.conferencedate5/10/2014
dc.source.conferencelocationCancun Mexico
dc.identifier.urlhttps://ecs.confex.com/ecs/226/webprogram/Paper39429.html
imec.availabilityPublished - imec


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