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Study of random telegraph noise in UTBOX silicon-on-insulator nMOSFETs

dc.contributor.authorLi, Chi-Kang
dc.contributor.authorFang, Wen
dc.contributor.authorSimoen, Eddy
dc.contributor.authorAoulaiche, Marc
dc.contributor.authorWu, Yuh-Renn
dc.contributor.authorLuo, Jun
dc.contributor.authorZhao, Chao
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-22T02:57:46Z
dc.date.available2021-10-22T02:57:46Z
dc.date.issued2014
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/24121
dc.sourceIIOimport
dc.titleStudy of random telegraph noise in UTBOX silicon-on-insulator nMOSFETs
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewyes
dc.source.beginpage109
dc.source.endpage114
dc.source.conferenceChina Semiconductor Technology International Conference - CSTIC
dc.source.conferencedate16/03/2014
dc.source.conferencelocationPennington USA
dc.identifier.urlhttp://ecst.ecsdl.org/content/60/1/109.abstract
imec.availabilityPublished - imec
imec.internalnotesECS Transactions; Vol. 60, Issue 1


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