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Growth techniques for high breakdown voltage in GaN/AlGaN HEMT on 200 mm Si (111) substrate by MOVPE

dc.contributor.authorLiang, Hu
dc.contributor.authorSaripalli, Yoga
dc.contributor.authorVan Hove, Marleen
dc.contributor.authorKang, Xuanwu
dc.contributor.authorVrancken, Evi
dc.contributor.authorZhao, Ming
dc.contributor.authorKandaswamy, Prem Kumar
dc.contributor.authorDecoutere, Stefaan
dc.contributor.authorLanger, Robert
dc.date.accessioned2021-10-22T03:04:48Z
dc.date.available2021-10-22T03:04:48Z
dc.date.issued2014
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/24139
dc.sourceIIOimport
dc.titleGrowth techniques for high breakdown voltage in GaN/AlGaN HEMT on 200 mm Si (111) substrate by MOVPE
dc.typeMeeting abstract
dc.contributor.imecauthorLiang, Hu
dc.contributor.imecauthorVrancken, Evi
dc.contributor.imecauthorZhao, Ming
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.imecauthorLanger, Robert
dc.contributor.orcidimecZhao, Ming::0000-0002-0856-851X
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.contributor.orcidimecLanger, Robert::0000-0002-1132-3468
dc.source.peerreviewyes
dc.source.beginpageMon-Oral-1-1
dc.source.conference17th International Conference on Metalorganic Vapor Phase Epitaxy - ICMOVPE XVII
dc.source.conferencedate13/07/2014
dc.source.conferencelocationLausanne Switzerland
imec.availabilityPublished - imec


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