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Solid phase epitaxy of GeSn alloys on silicon and integration in MOSFET devices

dc.contributor.authorLieten, Ruben
dc.contributor.authorMaeda, Tatsuro
dc.contributor.authorSeo, Jin Won
dc.contributor.authorJevasuwan, Wipakorn
dc.contributor.authorHattori, Hiroyuki
dc.contributor.authorUchida, Noriyuki
dc.contributor.authorMiura, Shu
dc.contributor.authorTanaka, Masatoshi
dc.contributor.authorFleischmann, Claudia
dc.contributor.authorVantomme, Andre
dc.contributor.authorJohnson, Brett
dc.contributor.authorLocquet, Jean-Pierre
dc.date.accessioned2021-10-22T03:06:01Z
dc.date.available2021-10-22T03:06:01Z
dc.date.issued2014
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/24141
dc.sourceIIOimport
dc.titleSolid phase epitaxy of GeSn alloys on silicon and integration in MOSFET devices
dc.typeProceedings paper
dc.contributor.imecauthorLieten, Ruben
dc.contributor.imecauthorFleischmann, Claudia
dc.contributor.imecauthorVantomme, Andre
dc.contributor.orcidimecFleischmann, Claudia::0000-0003-1531-6916
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage149
dc.source.endpage160
dc.source.conferenceHigh Purity and High Mobility Semiconductors 13
dc.source.conferencedate5/10/2014
dc.source.conferencelocationCancun Mexico
dc.identifier.urlhttp://ecst.ecsdl.org/content/64/11/149.abstract
imec.availabilityPublished - open access
imec.internalnotesECS Transactions; Vol. 64, Issue 11


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