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A new consistent RF- and noise model with special emphasis on impact ionization for dual-gate HFET in cascode configuration

dc.contributor.authorBreder, T.
dc.contributor.authorReuter, R.
dc.contributor.authorDaumann, W.
dc.contributor.authorSchreurs, Dominique
dc.contributor.authorvan der Zanden, Koen
dc.contributor.authorBrockerhoff, W.
dc.contributor.authorTegude, F. J.
dc.date.accessioned2021-09-30T11:30:36Z
dc.date.available2021-09-30T11:30:36Z
dc.date.issued1998
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/2418
dc.sourceIIOimport
dc.titleA new consistent RF- and noise model with special emphasis on impact ionization for dual-gate HFET in cascode configuration
dc.typeProceedings paper
dc.contributor.imecauthorSchreurs, Dominique
dc.source.peerreviewno
dc.source.beginpage1/323
dc.source.endpage1/327
dc.source.conferenceProceedings of the 28th European Microwave Conference
dc.source.conferencedate5/10/1998
dc.source.conferencelocationAmsterdam The Netherlands
imec.availabilityPublished - imec


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