Publication:

Trapping in GaN-based MIS-HEMTs: role of high drain bias and hot electrons

Date

2014

Journal article

Simple item page Full metadata Statistics

Author(s)

Meneghini, Matteo

;

;

;

Stoffels, Steve

;

Van Hove, Marleen

;

;

Decoutere, Stefaan

;

Meneghesso, Gaudio

;

Journal

Applied Physics Letters

Statistics

1955 since deposited on 2021-10-22

2last month

Acq. date: 2026-09-11