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Investigation of the impact of hot electrons and high drain bias on the dynamic Ron increase in GaN-based MIS-HEMTs grown on silicon

dc.contributor.authorMeneghini, Matteo
dc.contributor.authorBisi, Davide
dc.contributor.authorStoffels, Steve
dc.contributor.authorMarcon, Denis
dc.contributor.authorVan Hove, Marleen
dc.contributor.authorWu, Tian-Li
dc.contributor.authorDecoutere, Stefaan
dc.contributor.authorMeneghesso, Gaudenzio
dc.contributor.authorZanoni, Enrico
dc.date.accessioned2021-10-22T03:44:01Z
dc.date.available2021-10-22T03:44:01Z
dc.date.issued2014
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/24242
dc.sourceIIOimport
dc.titleInvestigation of the impact of hot electrons and high drain bias on the dynamic Ron increase in GaN-based MIS-HEMTs grown on silicon
dc.typeMeeting abstract
dc.contributor.imecauthorStoffels, Steve
dc.contributor.imecauthorMarcon, Denis
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.source.peerreviewno
dc.source.conferenceInternational Workshop on Nitride Semiconductors - IWN
dc.source.conferencedate24/08/2014
dc.source.conferencelocationWroclaw Polans
imec.availabilityPublished - imec


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