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Characterization of arsenic PIII Implants in FinFETs by LEXES, SIMS and STEM-EDX

dc.contributor.authorMeura, Kim-Anh Bui-Thi
dc.contributor.authorTorregrosa, Frank
dc.contributor.authorRobbes, Anne-Sophie
dc.contributor.authorChoi, Seoyoun
dc.contributor.authorMerkulov, Alexandre
dc.contributor.authorMoret, Mona
dc.contributor.authorDuchaine, Julian
dc.contributor.authorHoriguchi, Naoto
dc.contributor.authorLi, Letian
dc.contributor.authorMitterbauer, Christoph
dc.date.accessioned2021-10-22T03:46:18Z
dc.date.available2021-10-22T03:46:18Z
dc.date.issued2014
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/24247
dc.sourceIIOimport
dc.titleCharacterization of arsenic PIII Implants in FinFETs by LEXES, SIMS and STEM-EDX
dc.typeProceedings paper
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage1
dc.source.endpage4
dc.source.conference20th International Conference on Ion Implantation Technology - IITC
dc.source.conferencedate26/06/2014
dc.source.conferencelocationPortland, OR USA
dc.identifier.urlhttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6940011
imec.availabilityPublished - open access


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