EOT-scaling by interface layer scavenging and HfO2 $j-value increase in high-k/metal gate CMOS devices: trade-offs and perspectives

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Authors
Ragnarsson, Lars-Ake
Conference
IEEE Sweden Mini-Colloquium
Title
EOT-scaling by interface layer scavenging and HfO2 $j-value increase in high-k/metal gate CMOS devices: trade-offs and perspectives
Publication type
Oral presentation
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