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EOT-scaling by interface layer scavenging and HfO2 $j-value increase in high-k/metal gate CMOS devices: trade-offs and perspectives

dc.contributor.authorRagnarsson, Lars-Ake
dc.date.accessioned2021-10-22T04:57:37Z
dc.date.available2021-10-22T04:57:37Z
dc.date.issued2014
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/24414
dc.sourceIIOimport
dc.titleEOT-scaling by interface layer scavenging and HfO2 $j-value increase in high-k/metal gate CMOS devices: trade-offs and perspectives
dc.typeOral presentation
dc.contributor.imecauthorRagnarsson, Lars-Ake
dc.contributor.orcidimecRagnarsson, Lars-Ake::0000-0003-1057-8140
dc.source.peerreviewno
dc.source.conferenceIEEE Sweden Mini-Colloquium
dc.source.conferencedate26/05/2014
dc.source.conferencelocationStockholm Sweden
imec.availabilityPublished - imec


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