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Highly scalable bulk FinFET devices with multi-VT options by conductive metal gate stack tuning for the 10-nm node and beyond

dc.contributor.authorRagnarsson, Lars-Ake
dc.contributor.authorChew, Soon Aik
dc.contributor.authorDekkers, Harold
dc.contributor.authorToledano Luque, Maria
dc.contributor.authorParvais, Bertrand
dc.contributor.authorDe Keersgieter, An
dc.contributor.authorVan Ammel, Annemie
dc.contributor.authorSchram, Tom
dc.contributor.authorYoshida, Naomi
dc.contributor.authorPhatak, Anup
dc.contributor.authorHan, Keping
dc.contributor.authorColombeau, Benjamin
dc.contributor.authorBrand, Adam
dc.contributor.authorHoriguchi, Naoto
dc.contributor.authorThean, Aaron
dc.date.accessioned2021-10-22T04:58:10Z
dc.date.available2021-10-22T04:58:10Z
dc.date.issued2014
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/24415
dc.sourceIIOimport
dc.titleHighly scalable bulk FinFET devices with multi-VT options by conductive metal gate stack tuning for the 10-nm node and beyond
dc.typeProceedings paper
dc.contributor.imecauthorRagnarsson, Lars-Ake
dc.contributor.imecauthorDekkers, Harold
dc.contributor.imecauthorParvais, Bertrand
dc.contributor.imecauthorDe Keersgieter, An
dc.contributor.imecauthorVan Ammel, Annemie
dc.contributor.imecauthorSchram, Tom
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.imecauthorThean, Aaron
dc.contributor.orcidimecRagnarsson, Lars-Ake::0000-0003-1057-8140
dc.contributor.orcidimecDekkers, Harold::0000-0003-4778-5709
dc.contributor.orcidimecParvais, Bertrand::0000-0003-0769-7069
dc.contributor.orcidimecDe Keersgieter, An::0000-0002-5527-8582
dc.contributor.orcidimecSchram, Tom::0000-0003-1533-7055
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage56
dc.source.endpage57
dc.source.conferenceVLSI Technology Symposium
dc.source.conferencedate9/06/2014
dc.source.conferencelocationHonolulu, HI USA
imec.availabilityPublished - open access


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