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Comparative growth kinetics of SiGe in a commercial reduced pressure chemical vapour deposition EPI reactor and anomalies during growth of thin Si layers on SiGe

dc.contributor.authorCaymax, Matty
dc.contributor.authorLoo, Roger
dc.contributor.authorBrijs, Bert
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorHoward, Dave
dc.contributor.authorKimura, K.
dc.contributor.authorNakajima, K.
dc.date.accessioned2021-09-30T11:33:49Z
dc.date.available2021-09-30T11:33:49Z
dc.date.issued1998
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/2444
dc.sourceIIOimport
dc.titleComparative growth kinetics of SiGe in a commercial reduced pressure chemical vapour deposition EPI reactor and anomalies during growth of thin Si layers on SiGe
dc.typeProceedings paper
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage339
dc.source.endpage344
dc.source.conferenceEpitaxy and Applications of Si-Based Heterostructures
dc.source.conferencedate13/04/1998
dc.source.conferencelocationSan Francicso, CA USA
imec.availabilityPublished - open access
imec.internalnotesMRS Symposium Proceedings; Vol. 533


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