Authors

Rosseel, Erik; Profijt, Harald; Hikavyy, Andriy; Tolle, John; Kubicek, Stefan; Mannaert, Geert; L'abbe, Caroline; Wostyn, Kurt; Horiguchi, Naoto; Clarysse, Trudo; Parmentier, Brigitte; Dhayalan, Sathish Kumar; Bender, Hugo; Maes, Jan Willem; Loo, Roger

Conference

ECS Fall Meeting Symposium: SiGe, Ge, and Related Compounds: Materials, Processing, and Devices 6

Title

Characterization of epitaxial Si:C:P and Si:P layers for source/drain formation in advanced bulk finFETs

Publication type

Meeting abstract