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Characterization of epitaxial Si:C:P and Si:P layers for source/drain formation in advanced bulk finFETs

dc.contributor.authorRosseel, Erik
dc.contributor.authorProfijt, Harald
dc.contributor.authorHikavyy, Andriy
dc.contributor.authorTolle, John
dc.contributor.authorKubicek, Stefan
dc.contributor.authorMannaert, Geert
dc.contributor.authorL'abbe, Caroline
dc.contributor.authorWostyn, Kurt
dc.contributor.authorHoriguchi, Naoto
dc.contributor.authorClarysse, Trudo
dc.contributor.authorParmentier, Brigitte
dc.contributor.authorDhayalan, Sathish Kumar
dc.contributor.authorBender, Hugo
dc.contributor.authorMaes, Jan Willem
dc.contributor.authorLoo, Roger
dc.date.accessioned2021-10-22T05:17:41Z
dc.date.available2021-10-22T05:17:41Z
dc.date.issued2014-10
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/24456
dc.sourceIIOimport
dc.titleCharacterization of epitaxial Si:C:P and Si:P layers for source/drain formation in advanced bulk finFETs
dc.typeMeeting abstract
dc.contributor.imecauthorRosseel, Erik
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorKubicek, Stefan
dc.contributor.imecauthorMannaert, Geert
dc.contributor.imecauthorWostyn, Kurt
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.imecauthorParmentier, Brigitte
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorLoo, Roger
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimecWostyn, Kurt::0000-0003-3995-0292
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.source.peerreviewyes
dc.source.beginpage1855
dc.source.conferenceECS Fall Meeting Symposium: SiGe, Ge, and Related Compounds: Materials, Processing, and Devices 6
dc.source.conferencedate5/10/2014
dc.source.conferencelocationCancun Mexico
dc.identifier.urlhttps://ecs.confex.com/ecs/226/.../Paper41397.html
imec.availabilityPublished - imec


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