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Physical modeling of NBTI: from individual defects to devices

dc.contributor.authorRzepa, G.
dc.contributor.authorGoes, W.
dc.contributor.authorRott, G.
dc.contributor.authorRott, K.
dc.contributor.authorKarner, M.
dc.contributor.authorKernstock, C.
dc.contributor.authorKaczer, Ben
dc.contributor.authorReisinger, H.
dc.contributor.authorGrasser, T.
dc.date.accessioned2021-10-22T05:25:08Z
dc.date.available2021-10-22T05:25:08Z
dc.date.issued2014
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/24472
dc.sourceIIOimport
dc.titlePhysical modeling of NBTI: from individual defects to devices
dc.typeProceedings paper
dc.contributor.imecauthorKaczer, Ben
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.source.peerreviewyes
dc.source.beginpage81
dc.source.endpage84
dc.source.conferenceInternational Conference on Simulation of Semiconductor Processes and Devices - SISPAD
dc.source.conferencedate9/09/2014
dc.source.conferencelocationYokohama Japan
dc.identifier.urlhttp://dx.doi.org/10.1109/SISPAD.2014.6931568
imec.availabilityPublished - imec


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