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TCAD methodology for simulation of GaN-HEMT power devices

dc.contributor.authorStrauss, Stephan
dc.contributor.authorAxel, Erlebach
dc.contributor.authorTommaso, Cilento
dc.contributor.authorBakeroot, Benoit
dc.contributor.authorMarcon, Denis
dc.contributor.authorStoffels, Steve
dc.date.accessioned2021-10-22T06:11:31Z
dc.date.available2021-10-22T06:11:31Z
dc.date.issued2014-06
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/24569
dc.sourceIIOimport
dc.titleTCAD methodology for simulation of GaN-HEMT power devices
dc.typeProceedings paper
dc.contributor.imecauthorBakeroot, Benoit
dc.contributor.imecauthorMarcon, Denis
dc.contributor.imecauthorStoffels, Steve
dc.contributor.orcidimecBakeroot, Benoit::0000-0003-4392-1777
dc.source.peerreviewyes
dc.source.beginpage257
dc.source.endpage260
dc.source.conference26th International Symposium on Power Semiconductor Devices and IC's - ISPSD
dc.source.conferencedate15/06/2014
dc.source.conferencelocationWaikoloa, HI USA
imec.availabilityPublished - imec


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