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Influence of the Ge concentration on the threshold voltage and subthreshold slope of nanoscale vertical Si/SiGe pMOSFETs
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Influence of the Ge concentration on the threshold voltage and subthreshold slope of nanoscale vertical Si/SiGe pMOSFETs
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Date
1998
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2472.pdf
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Collaert, Nadine
;
De Meyer, Kristin
Journal
Abstract
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1819
since deposited on 2021-09-30
Acq. date: 2025-12-16
Citations
Metrics
Views
1819
since deposited on 2021-09-30
Acq. date: 2025-12-16
Citations