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Scaling the 3D bumps pitch from 20 to 10 μm, focusing on the wet Cu seed etch process development
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Scaling the 3D bumps pitch from 20 to 10 μm, focusing on the wet Cu seed etch process development
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Date
2014
Proceedings Paper
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Suhard, Samuel
;
Moussa, Alain
;
Slabbekoorn, John
;
Beirnaert, Filip
;
De Preter, Inge
;
Holsteyns, Frank
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Views
1853
since deposited on 2021-10-22
2
last month
1
last week
Acq. date: 2026-01-10
Citations